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| inchange semiconductor product specification silicon pnp power transistors 2SB705/705a/705b description ? ? with mt-200 package ? complement to type 2sd745/745a/745b applications ? audio frequency power amplifier ? suitable for output stages of 60~120w audio amplifiers and voltage regulators pinning(see fig.2) pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings (ta=25 ?? ) symbol parameter conditions value unit 2SB705 -140 2SB705a -150 v cbo collector-base voltage 2SB705b open emitter -160 v 2SB705 -140 2SB705a -150 v ceo collector-emitter voltage 2SB705b open base -160 v v ebo emitter-base voltage open collector -5 v i c collector current -10 a i cm collector current-peak -15 a p t total power dissipation t c =25 ?? 120 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? fig.1 simplified outline (mt-200) and symbol
inchange semiconductor product specification 2 silicon pnp power transistors 2SB705/705a/705b characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit 2SB705 -140 2SB705a -150 v (br)ceo collector-emitter breakdown voltage 2SB705b i c =-25ma; i b =0 -160 v v cesat collector-emitter saturation voltage i c =-5a;i b =-0.5 a -1.5 v v besat base-emitter saturation voltage i c =-5a;i b =-0.5 a -2.0 v i cbo collector cut-off current v cb =-140v; i e =0 -50 | a i ebo emitter cut-off current v eb =-3v; i c =0 -50 | a h fe-1 dc current gain i c =-50ma ; v ce =-5v 20 h fe-2 dc current gain i c =-2a ; v ce =-5v 40 200 f t transition frequency i c =-0.2a ; v ce =-5v 17 mhz c ob output capacitance i e =0; v cb =-10v;f=1mhz 430 pf ? h fe-2 classifications s r q 40-80 60-120 100-200 inchange semiconductor product specification 3 silicon pnp power transistors 2SB705/705a/705b package outline fig.2 outline dimensions |
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